ULN2803引脚图
型号:ULN2803APG 封装:DIP18
ULN2802 ULN2803 ULN2804A 8个NPN达林顿晶体管,连接在阵列非常适合逻辑接口电平数字电路(例如TTL,CMOS或PMOS上/ NMOS)和较高的电流/电压,如电灯,电磁阀,继电器,打印锤或其他类似的负载,广泛的使用范围:计算机,工业和消费应用。所有设备功能由集电极输出和钳位二极管瞬态抑制。 该ULN2803是专为符合标准TTL,而制造ULN2804适合6至15V的高级别CMOS或PMOS上。该电路为反向输出型,即输入低电平电压,输出端才能导通工作。
MAXIMUM RATINGS (TA = 25℃ and rating apply to any one device in the
package, unless otherwise noted.)最大额定值
Rating 参数Symbol 符号Value 数值Unit 单位
Outputvoltage 输出电压VO 50 V
Inputvoltage (Except ULN2801) 输入电压(除ULN2801 )VI 30 V
Collector Current – Continuous
集电极电流-连续IC 500 mA
Base Current – Continuous 基极电流-连续IB 25 mA
Operating Ambient Temperature Range 操作环境温度范围TA 0 to +70 ℃
Storage Temperature Range 储存温度范围Tstg – 55 to +150 ℃
Junction Temperature 结温TJ 125 ℃
ELECTRICAL CHARACTERISTICS (TA = 25℃, unless otherwise noted)电气特性:
Characteristic 参数符号 最小 典型最大Unit单位
Output Leakage Current (Figure 1)输出泄漏电流(图1 )μA
(VO = 50v, TA = +70℃) 所有类型ICEX 100
(VO = 50v, TA = +25℃) 所有类型 50
(VO = 50v, TA = +70℃,vI = 6.0V) ULN2802 500
(VO = 50v, TA = +70℃,vI = 1.0V)ULN2804 500
Collector–Emitter Saturationvoltage (Figure 2)集电极发射极饱和电压(图2 ) V
(IC = 350mA, IB = 500μA) 所有类型VCE(sat) 1.1 1.6
(IC = 200mA, IB = 350μA) 所有类型 0.951.3
(IC = 100mA, IB = 250μA) 所有类型 0.85 1.1
Input Current – On Condition (Figure 4) 输入电流-状态(图4 )mA
(VI = 17v)ULN2802II(on) 0.82 1.25
(VI = 3.85v) ULN2803 0.931.35
(VI = 5.0v) ULN2804 0.35 0.5
(VI = 12v)ULN2804 1.0 1.45
Inputvoltage – On Condition (Figure 5) 输入电压-状态(图5 )V
(VCE = 2.0v, IC = 300mA) ULN2802VI(on) 13
(VCE = 2.0v, IC = 200mA) ULN2803 2.4
(VCE = 2.0v, IC = 250mA) ULN2803 2.7
(VCE = 2.0v, IC = 300mA) ULN2803 3.0
(VCE = 2.0v, IC = 125mA) ULN2804 5.0
(VCE = 2.0v, IC = 200mA) ULN2804 6.0
(VCE = 2.0v, IC = 275mA) ULN2804 7.0
(VCE = 2.0v, IC = 350mA) ULN2804 8.0
Input Current–Off Condition 输入电流开关条件(Figure3)(IC= 500mA,TA=+70℃) 所有类型 II(off) 50 100 – μA
DC Current Gain (Figure 2)直流电流增益(VCE=2.0v, IC=350mA) ULN2801 hFE 1000 – – –
Input Capacitance 输入电容CI – 15 25 pF
Turn–On Delay Time 开启延迟时间(50% EI to 50% EO) ton – 0.25 1.0 μs
Turn–Off Delay Time 关断延迟时间(50% EI to 50% EO) toff – 0.25 1.0 μs
Clamp Diode Leakage Current (Figure 6)钳位二极管漏电流(VR=50v) TA = +25℃IR – – 50 μA
TA = +70℃ 100
Clamp Diode Forwardvoltage(Figure 7)钳位二极管正向电压(IF=350mA) VF – 1.5 2.0
V