来源：iFixit and TechIngsights
转自： 手机市场分享/手机技术资讯
近日ifixit和TechInsight 都对Galaxy S8进行了拆解。
今天小编就将两份拆解都放到这里：
三星Galaxy S8拆解(一)
按照惯例还是在啰嗦几句三星Galaxy S8的配置信息：5.8英寸2960*1440分辨率双曲面Super AMOLED屏幕(570ppi);高通骁龙835或三星Exynos 8895处理器;具有4GB RAM和64GB内部存储，可通过MicroSD卡扩展(最多256GB)1200万像素后置摄像头，具有双像素自动对焦和4K视频捕捉功能; 800万像素前置摄像头;IP68防水等级;Android 7.0 Nougat(牛轧糖)系统。
如果排除机身尺寸，那么三星Galaxy S8与S8+外观上的区别可以忽略不计。此外在三星Galaxy S8机身上还有：扬声器格栅和麦克风孔;USB-C充电端口和耳机插孔;后置指纹识别;心率传感器、闪光灯、摄像头等等。
从背部下手，正式开始三星Galaxy S8拆解。通过撬片才能勉强在机身上打开一个缝隙，同时还需要加热来软化粘合剂。
后壳的拆解需要技巧和耐心，不过周边缝隙上这些厚厚的粘合剂还是有些抢眼(毕竟IP68防水，机身密闭性自然要求很高)。当然在取下后壳时，需要注意连接指纹传感器的排线。
在机身后壳上三星Galaxy S8的指纹传感器十分抢眼。与绝大多数智能手机不同，甚至说只此一家：该机的指纹识别并未安置在机身正中央，而是在摄像头一侧，多少增加了用户“适应成本”。
但是对于拆解来说，位于背部的指纹传感器为模块化设计，如果需要更换，只需要加热战胜粘合剂、撬开后壳就可以了。
继续向下拆解“中层硬件电路”有很好的集成性：天线与扬声器、天线与NFC、线圈，还有无线充电面板等组合在中间的框架中，想要访问主板，第一步就是取下这层器件。(在随后的三星Galaxy S8+拆解中，将会详细介绍这一过程。)
尽管此时电池已经“暴露在外”，但并不等同于可以轻松取下来。三星Galaxy S8的电池使用了较多粘合剂进行固定，增加了拆解难度。
这块电池容量为11.55 Wh，与Google Pixel的10.66 Wh相当。
三星Galaxy S8拆解(二)
取下主板并不困难，只不过三星Galaxy S8中的I/O电路板连接器位于主板下方，让拆解麻烦了一些。
主板本身相对轻松地弹出，还可以看到一根细细的“三星特有”导热铜管。除此之外，在电路板上还可以看到摄像头以及红膜扫描相机，这些与三星Galaxy S8+的配置相同，在对后者的拆解中将会详细介绍。
三星Galaxy S8的I/O子板配置与S8+大致一样，耳机接口同样采用了模块化设计，便于后期更换、维修，此外针对防水当然做了很多努力。
是时候来看看，三星Galaxy S8的主板了。下图中红色方框内为三星K3UH5H50MM-NGCJ 4GB LPDDR4 RAM覆盖在MSM8998骁龙835上;橙色方框内为东芝THGBF7G9L4LBATR 64GB UFS(NAND闪存+控制器);黄色方框内为高通Aqstic WCD9341音频编解码器;绿色方框内为Skyworks 78160-11;浅蓝色方框内为安华高AFEM-9066;蓝色方框内为恩智浦80T71 NFC控制器。
在主板的另一侧则如下图所示：红色方框内为村田KM6D28040 Wi-Fi模块;橙色方框内为高通PM8998(类似于PM8920);黄色方框内为高通WTR5975射频收发器;绿色方框内为安华高AFEM-9053;浅蓝色方框内为IDT P9320S;蓝色方框内为Maxim MAX77838配套PMIC(类似于MAX77829)。
至此三星Galaxy S8基本已经“支离破碎”，有关摄像头、I/O电路板以及隐藏在屏幕下神秘的“Home键”将在三星Galaxy S8+的拆解中详细介绍。
最终ifixit团队给三星Galaxy S8打出了4分的可修复性评分(10分最容易修复)。其优点在于：许多组件都是模块化的，可以独立更换。
While consumers wait a few more days, we are excited to announce receipt of our Galaxy S8. We have begun the busy work of taking it apart, and identifying all the components.
While we eagerly anticipate detailed analysis from our labs and experts, below is a sneak peek at what we have uncovered thus far. Above are images of the front and back of the printed circuit board (PCB), from which we identify the following parts:
Manufacturer
Part Number
Function
Qualcomm
MSM8998
Application processor
Samsung
K3UH5H50MM-NGCJ
4 GB LPDDR4X
Samsung
S6SY761X
Touch screen controller
Samsung
S5C73C3
Image processor
Qualcomm
WTR5975
RF transceiver
Qualcomm
PM8998
PMIC
Qualcomm
PM8005
PMIC
Maxim
MAX77838
PMIC
Samsung
S2MPB02
PMIC
Broadcom
AFEM-9053
Power amplifier
Broadcom
AFEM-9066
Power amplifier
Skyworks
SKY78160-11
Power amplifier
Toshiba
THGBF7G9L4LBATR
64 GB universal Flash storage
Qualcomm
QET4100
Envelope tracking power supply
Qualcomm
WCD9341
Audio codec
Maxim
MAX98506BEWV
Audio amplifier
NXP
PN80T
NFC controller
STMicroelectronics
LPS22HB
Barometer
STMicroelectronics
K2G2IS
OIS gyroscope
STMicroelectronics
LSM6DL
6-axis inertial sensor
Knowles
Part number to come
Microphone
Knowles
Part number to come
Microphone
Cameras
Our lab staff completed preliminary analysis of the 8 MP selfie camera with autofocus and an iris scanner, co-packaged in a 12.5 mm x 11.3 mm x 5.1 mm thick assembly.
The selfie camera from this G950W model was sourced from Sony. Sony typically does not use conventional die markings on its back-illuminated small-pixel mobile image sensor chips, however the part number has beenreported to be the IMX320. The IMX320 is a stacked (Exmor RS) CMOS image sensor (CIS) with a die size of
4.07 mm x 4.82 mm (19.6 mm2) and a pixel pitch of 1.12 μm. Our initial findings suggest it is a conventional back-illuminated (Exmor R) chip, but we’ll be doing more work to learn if it is a stacked (Exmor RS) chip with direct bond interconnect (DBI).
The iris scanner chip, while employing new packaging, is the same chip we found in the Galaxy Note 7. The iris scanner die has “S5K5E6YV” die markings, though there is some internal debate as to whether the “V” may in fact be a “U”. Regardless, the die markings are identical to the Note 7’s iris scanner. This chip is a monolithic
(non-stacked) back-illuminated CIS featuring a 4.63 mm x 3.55 mm (16.4 mm2) die size and a pixel pitch of 1.12 μm. Additional details are available in our off-the-shelf Device Essentials Image Set and Summary report
(DEF-1609-801).
We’ll catch up with an update on the the rear-facing camera as results come in from our labs.
Skyworks 2G SKY77365 Power Amplifier Module
Although AT&T announced the shutdown of their 2G cellular network, the appearance of a separate Skyworks 2G RF PAM found in the Galaxy S8 SM-G950W is evidence there is still plenty of interest and need for cell phone OEMs to build devices supporting the legacy network bands. Even if other US cellular carriers follow AT&T and shut off their own 2G networks, 2G cellular will remain active in the UK and many European countries, such as France and Germany, until 2022.
The question is why a separate power amplifier? We asked our in-house RF subject matter expert, Tareq Salim, and his take is this: “...the other multi-mode, multi-band PAMs use amplifiers that are not optimal to work with native 2G GMSK [Gaussian minimum shift keying]. The key success factor for GMSK is having a fixed gain, which the Skyworks SKY77365 achieves.”
Inertial, Pressure, and Gyroscope Sensors
So far we have observed a few wins for STMicroelectronics sensors in the S8, beginning with an LPS22HB pressure sensor situated just under the primary image sensor.
We also see an optical image stabilization (OIS) gyroscope with the part number K2G2IS.
The inertial sensor slot also belongs to STMicroelectronics with the LSM6Dl 6-axis inertial sensor, located behind and just under the primary camera, on the opposite side, next to the brand new NXP PN80T NFC controller.
This NFC device is new to us and will be going into the lab as soon as possible. Given that we have analyzed every generation of NXP NFC devices, of course we will be studying this one too, looking for innovation.
