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肖特基二极管(Schottky Diode)
SymbolParameter中文
VRRM Peak repetitive reverse voltage 反向重复峰值电压
VRWM Working peak reverse voltage 方向工作峰值电压
VR DC Blocking Voltage 反向直流电压
VR(RMS) RMS Reverse Voltage 反向电压有效值
IF(AV) Average Rectified Forward Current 正向平均电流
IR Reverse Current 反向电流
IFSM Non-Repetitive Peak Forward Surge Current 正向浪涌电流
VF Forward Voltage 正向直流电压
Cj Typical Junction Capactiance 结电容
PD Power Dissipation 耗散功率
Tj Operating Junction Temperature 工作结温
Tstg Storage Temperature Range 存储温度
Rth(j-a) Thermal Resistance from Junction to Ambient 结到环境的热阻
Pin二极管(Pin Diode)
SymbolParameter中文
VR Continuous reverse voltage 反向直流电压
IF Continuous forward current 正向直流电流
VF Forward voltage 正向电压
IR Reverse current 反向电流
Cd diode capacitance
二极管电容
rd diode forward resistance 二极管正向电阻
Ptot total power dissipation 总的功率损耗
Tj Junction Temperature 结温
Tstg storage temperature 存储温度
TVS二极管(TVS Diode)
SymbolParameter中文
IPP Maximum reverse peak pulse current 峰值脉冲电流
VC Clampling voltage 钳位电压
IR Maximum reverse leakage current 最大反向漏电流
VBR Breakdown voltage 击穿电压
VRWM Working peak reverse voltage 反向工作峰值电压
VF Forward voltage 正向电压
IF Forward current 正向电流
IT Test current 测试电流
可控硅(SCR)
SymbolParameter中文
VDRM Peak repetitive off-state voltage 断态重复峰值电压
VRRM Peak repetitive reverse voltage 反向重复峰值电压
IT(RMS) RMS On-state current 额定通态电流
ITSM Non repetitive surge peak on-state current 通态非重复浪涌电流
IGM Forward peak gate current 控制极重复峰值电流
VTM peak forward on-state voltage 通态峰值电压
IGT Gate trigger current 控制极触发直流电流
VGT Gate trigger voltage 控制极出发电压
IH Holding current 维持电流
IDRM Peak repetitive off-state current 断态重复峰值电流
IRRM Peak repetitive reverse current 反向重复峰值电流
PG(AV) Average gate power dissipation 控制极平均功率
Tj operating junction temperature range 工作结温
TstgTstg storage temperature range 存储温度
三端稳压管(Three Terminal Voltage Regulator)
SymbolParameter中文
VI input voltage 输入电压
Vo output voltage 输出电压
△Vo Load regulation 输出调整率
△Vo Line regulation 输入调整率
Iq quiescent current 偏置电流
△Iq quiescent current change 偏置电流变化量
VN Output noise voltage 输出噪声电压
RR Ripple rejection 纹波抑制比
Vd dropout voltage 降落电压
Isc short circuit current 短路输出电流
Ipk peak current 峰值输出电流
Topr operating junction temperature range 结温
Tstg storage temperature range 存储温度
43系列稳压管(Adjustable Shunt Regulator)
SymbolParameter中文
VKA Cathode voltage 阴极电压
IK Cathode current range(continous) 阴极电流
Iref Reference input current range,continous 基准输入电流
PD Power dissipation 耗散功率
Rth(j-a) Thermal resistance from junction to ambient 结到环境的热阻
Topr operating junction temperature range 工作结温
Tstg storage temperature range 存储温度
Vref Reference input voltage 基准输入电压
△Vref(dev)Deviation of reference input voltage over full temperature range 全温度范围内基准输入电压的偏差
△Vref/△VKARatio of change in reference input voltage to the change in cathode voltage 基准输入电压变化量与阴极电压变化量的比
△Iref(dev)Deviation of reference input current over full temperature range 全温度范围内基准输入电流的偏差
Imin Minimum cathode current for regulation 稳压时最小负极电流
Ioff Off-state cathode current 关断状态阴极电流
|ZKA| Dynamic impedance 动态阻抗
普通晶体管(Transistor)
SymbolParameter中文
VCBO Collector-Base voltage 发射极开路,集电极-基极电压
VCEO Collector-emitter voltage 基极开路,集电极-发射极电压
VEBO Emitter-base voltage 集电极开路,发射极-基极电压
IC Collector current 集电极电流
PC Collector power dissipation 集电极耗散功率
Tj Junction temperature 结温
Tstg storage temperature 存储温度
V(BR)CBO Collector-Base breakdown voltage 发射极开路,集电极-基极反向电压
V(BR)CEO Collector-emitter breakdown voltage 基极开路,集电极-发射极反向电压
V(BR)EBO Emitter-base breakdown voltage 集电极开路,发射极-基极反向电压
ICBO Collector cut-off current 发射极开路,集电极-基极截止电流
IEBO Emitter cut-off current 集电极开路,发射极-基极截止电流
ICEO Collector cut-off current 基极开路,集电极-发射极截止电流
hFE DC current gain 共发射极正向电流传输比的静态值
VCEsat Collector-emitter saturation voltage 集电极-发射极饱和电压
VBEsat Base-emitter saturation voltage 基极-发射极饱和电压
VBE Base-emitter voltage 基极-发射极电压
fT Transition frequency 特征频率
Cobo Collector output capacitance 共基极输出电容
Cibo Collector input capacitance 共基极输入电容
F Noise figure 噪声系数
ton Turn-on time 开通时间
toff Turn-off time 关断时间
tr Rise time 上升时间
ts Storage time 存储时间
tf Fall time 下降时间
td Delay time 延迟时间
数字晶体管(Digital Transistor）
SymbolParameter中文
VCC Supply voltage 直流电压
VIN input voltage 输入电压
IO output current 输出电流
PD Power dissipation 功率损耗
VI(off) Input-off voltage 输入截止电压
VI(on) Input-on voltage 输入开启电压
VO(on) output voltage 输出电压
II input current 输入电流
IO(off) output current 输出截止电流
GI DC current gain 直流增益
R1 Input resistance 输入电阻
R2/R1 Resistance ratio 电阻率
fT Transition frequency 传输频率
Tj junction temperature 结温
Tstg storage temperature range 存储温度
VCBO Collector-base voltage 发射极开路,集电极-基极反向击穿电压
VCEO Collector-emitter voltage 基极开路,集电极-发射极反向击穿电压
VEBO Emitter-base voltage 集电极开路,发射极-基极反向击穿电压
场效应管(MOSFET)
SymbolParameter中文
ID Continous drain current 漏极直流电流
VGS Gate-source voltage 栅-源电压
VDS Drain-source voltage 漏-源电压
EAS single pulse avalchane energy 单脉冲雪崩击穿能量
Rth(j-a) Thermal resistance from junction to ambient 结到环境的热阻
Rth(j-c) Thermal resistance from junction to case 结到管壳的热阻
V(BR)DSS Drain-source breakdown voltage 漏源击穿电压
V(GS)th Gate threshold voltage 栅源阈值电压
IGSS Gate-body leakage current 漏-源短路的栅极电流
IDSS Zero gate voltage drain curent 栅-源短路的漏极电流
rDS(on) Drain-source on-resistance 漏源通态电阻
gfs Forward transconductance 跨导
VSD Diode forward voltage 漏源间体内反并联二极管正向压降
Ciss Input capacitance 栅-源电容
Coss Output capacitance 漏-源电容
Crss Reverse transfer capacitance 反向传输电容
Rg Gate resistance 栅极电阻
td(on) Turn-on delay time 开通延迟时间
tr Rise time 上升时间
td(off) Turn-off delay time 关断延迟时间
tf Fall time 下降时间
IDM Pulsed drain current 最大脉冲漏电流
PD Power dissipation 耗散功率
Tj operating junction temperature range 结温
Tstg storage temperature range 存储温度
